Analytical Investigation of the Channel Characteristics in Graphene Nano Scroll based Transistors

Silicon-based electronic devices as a three-terminal field-effect transistor is predictably reached to its extreme limitation by getting its channel length below the 10nm regime technology and suffering from numerous scaling drawbacks. As a technology progress, replaced of a new material in transistor channel is considered. Therefore, due to excellent properties, new material as a Nano Scrolls are purposed. These replacements for the traditional silicon-based FET, plays a significant role to increasing the electronic devices speed and performance. However, shrinking of the device dimensions led to challenges such as leakage current, short channel effects, high power consumption, interconnect difficulties and quantum effects, these Nano-device and Nano-structures are the perfect candidate to overcome the scaling problems. In the present paper investigation of the channel scaling and the charge carrier mobility behavior as one of the most remarkable characteristics for modeling of nanoscale Metal Oxide field-effect transistors is considered. This numerical mobility model of charge carrier is modeled analytically for the Graphene Nano scroll Field-Effect Transistor, in which the carrier concentration, channel length and channel’s resistance characteristics are highlighted. According to these carrier mobility model of GNS-based FET transistor, the carrier’s mobility versus carrier concentration is decreased. Moreover, the channel length increasing caused to growing the channel current. By increasing the channel length, the channel resistance and carrier mobility is ignorable declined. The temperature rising decreases the carrier’s mobility and the channel length expanding increases the mobility. Finally, comparison of the model by experimental results, supports the acceptability of model and can maintenance the appropriately of the model outcomes by experimental.