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    Application of QMSA Method for Al0.3Ga0.7N/GaN HEMT Structure
    (Giresun Üniversitesi Fen Bilimleri Enstitüsü, 2023) Bilgili, Ahmet Kürşat; Akpınar, Ömer; Kaya, Naki; Öztürk, Mustafa Kemal
    In this study, Al0.3Ga0.7N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.